Early stage of CVD graphene synthesis on Ge(001) substrate
L. Di Gaspare, A.M. Scaparro, M. Fanfoni, L. Fazi, A. Sgarlata, A. Notargiacomo, V. Miseikis, C. Coletti, M. De Seta
文献索引：10.1016/j.carbon.2018.03.092
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摘要
In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of μ-Raman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates with different size, shape and local ordering which are not fully sp2 hybridized. In some atomic size regions these aggregates show a linear arrangement of atoms as well as the first signature of the hexagonal structure of graphene. The carbon precursor phase evolves in graphene domains through an ordering process, associated to a re-arrangement of the Ge surface morphology. This surface structuring represents the embryo stage of the hills-and-valleys faceting featured by the Ge(001) surface for longer deposition times, when the graphene domains coalesce to form a single layer graphene film.