Effects of Al2O3 Atomic Layer Deposition on Interfacial Structure and Electron Transfer Dynamics at Re-Bipyridyl Complex/TiO2 Interfaces
Jia Song, Aimin Ge, Brandon Piercy, Mark D. Losego, Tianquan Lian
文献索引：10.1016/j.chemphys.2018.03.033
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摘要
Atomic layer deposition (ALD) of oxide layers on sensitizer- and/or catalyst- functionalized semiconductor surfaces have been used to improve the stability of dye-sensitized solar cells and photoelectrosynthesis cells. However, how the ALD layer affects the interfacial structure of adsorbed molecules and interfacial electron transfer dynamics is still unclear. Herein, we investigated the effects of ALD of Al2O3 on adsorption structure of Re bipyridyl complex on TiO2 nanocrystalline films and rutile (001) single crystals by IR absorption and sum frequency generation spectroscopy. Further, the electron transfer dynamics between the Re complex and TiO2 film was also examined by ultrafast infrared transient absorption spectroscopy. Our results show that the electron injection yield decreases with the increase of ALD layer thickness.