Chemistry of Materials

Investigation of indium phosphide quantum dot nucleation and growth utilizing triarylsilylphosphine precursors

DC Gary, BA Glassy, BM Cossairt

文献索引：Gary, Dylan C.; Glassy, Benjamin A.; Cossairt, Brandi M. Chemistry of Materials, 2014 , vol. 26, # 4 p. 1734 - 1744

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被引用次数: 29

摘要

We have developed a two-phosphine strategy to independently tune nucleation and growth kinetics based on the relative reactivity of each precursor in the synthesis of indium phosphide (InP) quantum dots (QDs). This approach was allowed by the exploration of the synthesis and reactivity of a series of sterically encumbered triarylsilylphosphines substituted at the para position of the aryl group, P (Si (C6H4-X) 3) 3 (X= H, Me, CF3, or Cl ...