... Volume: Page ... by thermogravimetric analysis (TGA, TA Instruments, Figure S1, flow rate of carrier N 2 = 100 mL/min, heating rate = 4 °C/min ... The temperature at a Si substrate was 40 °C, and the growth proceeded for 15 min after the furnace reached 180 °C (flow ...
[Zhao, Xiaoyong; Piliego, Claudia; Kim, Bongsoo; Poulsen, Daniel A.; Ma, Biwu; Unruh, David A.; Frechet, Jean M. J. Chemistry of Materials, 2010 , vol. 22, # 7 p. 2325 - 2332]