N??Type Self??Assembled Monolayer Field??Effect Transistors and Complementary Inverters

…, A Neuhold, A Moser, C Van der Marel…

文献索引：Ringk, Andreas; Li, Xiaoran; Gholamrezaie, Fatemeh; Smits, Edsger C. P.; Neuhold, Alfred; Moser, Armin; Van Der Marel, Cees; Gelinck, Gerwin H.; Resel, Roland; De Leeuw, Dago M.; Strohriegl, Peter Advanced Functional Materials, 2013 , vol. 23, # 16 p. 2016 - 2023

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被引用次数: 24

摘要

Abstract This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 μm. Highly reproducible transistors with electron mobilities of 1.5× 10− 3 cm 2 V− 1 s− 1 and ...