Advanced Materials (FRG) 2012-07-03

Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

Hyun-June Jung, Soon-Gil Yoon, Soon-Ku Hong, Jeong-Yong Lee

文献索引：Adv. Mater. 24(25) , 3396-400, (2012)

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摘要

Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross-sectional image clearly shows bismuth nanoparticles at the interface between the Al(2) O(3) and HfO(2) layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface.Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.