N-phenylbutanethioamide
更新时间：2024-02-03 00:37:37
N-phenylbutanethioamide结构式
|
常用名 | N-phenylbutanethioamide | 英文名 | N-phenylbutanethioamide |
|---|---|---|---|---|
| CAS号 | 18051-60-0 | 分子量 | 179.28200 | |
| 密度 | 1.097g/cm3 | 沸点 | 261.6ºC at 760 mmHg | |
| 分子式 | C10H13NS | 熔点 | N/A | |
| MSDS | N/A | 闪点 | 112ºC |
| 英文名 | N-phenylbutanethioamide |
|---|---|
| 英文别名 | 更多 |
| 密度 | 1.097g/cm3 |
|---|---|
| 沸点 | 261.6ºC at 760 mmHg |
| 分子式 | C10H13NS |
| 分子量 | 179.28200 |
| 闪点 | 112ºC |
| 精确质量 | 179.07700 |
| PSA | 44.12000 |
| LogP | 3.29900 |
| 蒸汽压 | 0.0115mmHg at 25°C |
| 折射率 | 1.615 |
|
~86%
N-phenylbutanet... 18051-60-0 |
| 文献：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.; INOUE, Hideko; NAKAGAWA, Tomoka; OHSAWA, Nobuharu; SEO, Satoshi; YAMADA, Yui Patent: WO2011/52516 A1, 2011 ; Location in patent: Page/Page column 91 ; |
|
~89%
N-phenylbutanet... 18051-60-0 |
| 文献：Doszczak, Leszek; Rachon, Janusz Journal of the Chemical Society. Perkin Transactions 1, 2002 , # 10 p. 1271 - 1279 |
|
~%
N-phenylbutanet... 18051-60-0 |
| 文献：SEMICONDUCTOR ENERGY LABORATORY CO., LTD.; INOUE, Hideko; NAKAGAWA, Tomoka; OHSAWA, Nobuharu; SEO, Satoshi; YAMADA, Yui Patent: WO2011/52516 A1, 2011 ; |
|
~%
N-phenylbutanet... 18051-60-0 |
| 文献：Sachs; Loevy Chemische Berichte, 1903 , vol. 36, p. 586 Chemische Berichte, 1904 , vol. 37, p. 875 |
| N-phenylbutanethioamide上游产品 3 | |
|---|---|
| N-phenylbutanethioamide下游产品 2 | |
CAS号19255-90-4
CAS号17229-76-4| Thiobuttersaeure-anilid |
| thiobutyranilide |
| Thiobutyranilid |
| N-phenylthiobutyramide |
