triiodomethylsilane结构式
|
常用名 | triiodomethylsilane | 英文名 | triiodomethylsilane |
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CAS号 | 18162-40-8 | 分子量 | 423.83300 | |
密度 | N/A | 沸点 | 246.695ºC at 760 mmHg | |
分子式 | CH3I3Si | 熔点 | N/A | |
MSDS | N/A | 闪点 | 102.998ºC |
英文名 | triiodomethylsilane |
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英文别名 | 更多 |
沸点 | 246.695ºC at 760 mmHg |
---|---|
分子式 | CH3I3Si |
分子量 | 423.83300 |
闪点 | 102.998ºC |
精确质量 | 423.71400 |
LogP | 1.68800 |
蒸汽压 | 0.042mmHg at 25°C |
~% triiodomethylsilane 18162-40-8 |
文献:DOW CORNING CORPORATION; ANDERSON, Kurt, E.; DASH, Aswini, K.; HALL, Charles, Alan; KATSOULIS, Dimitris; LARSEN, Robert, Thomas; MCLAUGHLIN, Matthew, J.; WINELAND, Jonathan, David Patent: WO2011/94140 A2, 2011 ; Location in patent: Page/Page column 8-9 ; |
~% triiodomethylsilane 18162-40-8 |
文献:Anderson Journal of the American Chemical Society, 1951 , vol. 73, p. 2351 Full Text View citing articles Show Details Gmelin Handbook: Si: MVol.C, 64, page 179 - 181 |
~% triiodomethylsilane 18162-40-8 |
文献:DOW CORNING CORPORATION; ANDERSON, Kurt, E.; DASH, Aswini, K.; HALL, Charles, Alan; KATSOULIS, Dimitris; LARSEN, Robert, Thomas; MCLAUGHLIN, Matthew, J.; WINELAND, Jonathan, David Patent: WO2011/94140 A2, 2011 ; Location in patent: Page/Page column 9 ; |
~% triiodomethylsilane 18162-40-8 |
文献:Anderson Journal of the American Chemical Society, 1951 , vol. 73, p. 5804 Full Text View citing articles Show Details Gmelin Handbook: Si: MVol.C, 64, page 179 - 181 |
~% triiodomethylsilane 18162-40-8 |
文献:Anderson Journal of the American Chemical Society, 1951 , vol. 73, p. 5804 Full Text View citing articles Show Details Gmelin Handbook: Si: MVol.C, 64, page 179 - 181 |
Methyl-triiodsilan |
triiodo-methyl-silane |
Trijod-methyl-silan |
Silane,triiodomethyl |