ACS Applied Materials & Interfaces 2010-02-01

In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).

Martin Rose, Jaakko Niinistö, Ingolf Endler, Johann W Bartha, Peter Kücher, Mikko Ritala

Index: ACS Appl. Mater. Interfaces 2 , 347, (2010)

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Abstract

The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH(4) and CO(2), water was detected as one of the reaction byproduct in the TMA/O(3) process. In the TEMAH/O(3) process, the surface after the ozone pulse consisted of chemisorpted active oxygen and -OH groups, leading to the release of H(2)O, CO(2), and HNEtMe during the metal precursor pulse.