Progress in Crystal Growth and Characterization of Materials 2016-12-02

Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces

Theodosia Gougousi

Index: 10.1016/j.pcrysgrow.2016.11.001

Full Text: HTML

Abstract

The goal of this article is to provide an overview of the state of knowledge regarding the Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An introduction to ALD, the band structure, various defects present on the III–V surface and how they relate to Fermi level pinning are discussed. Surface passivation approaches are examined in detail in conjunction with experimental and computational results. The “interface clean-up” reaction that leads to the formation of a sharp gate oxide/semiconductor interface is related to the surface chemistry and the transport of the surface oxides through the growing dielectric film. Finally, the deposition of metal oxides on semiconductors is discussed in the context of interface quality and some examples of devices using III–V channels and ALD metal oxides are given.

Latest Articles:

Synthesis and characterization of electrical features of bismuth manganite and bismuth ferrite: effects of doping in cationic and anionic sublattice: Materials for applications

2018-03-17

[10.1016/j.pcrysgrow.2018.02.001]

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

2017-11-14

[10.1016/j.pcrysgrow.2017.10.001]

Synthesis of inorganic and organic crystals mediated by proteins in different biological organisms. A mechanism of biomineralization conserved throughout evolution in all living species

2017-07-21

[10.1016/j.pcrysgrow.2017.07.001]

Lifting the mist of flatland: The recent progress in the characterizations of two-dimensional materials

2017-06-20

[10.1016/j.pcrysgrow.2017.06.001]

Germanium based photonic components toward a full silicon/germanium photonic platform

2017-05-20

[10.1016/j.pcrysgrow.2017.04.004]

More Articles...