Studies of a??Si: H growth mechanism by Rutherford recoil measurement of H and D in films prepared from SiH4??D2 and SiD4??H2

Y Yatsurugi, O Kuboi, M Hashimoto, H Nagai…

Index: Yatsurugi; Kuboi; Hashimoto; Nagai; Aratani; Yanokura; Kohno; Nozaki Applied Physics Letters, 1984 , vol. 44, # 2 p. 246 - 248

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Citation Number: 9

Abstract

a??Si: H films were prepared by rf glow discharge in SiH4??D2 or SiD4??H2 mixtures and analyzed for H and D by Rutherford forward recoil measurement in order to study its growth mechanism. In a low power rf discharge, more H atoms than D atoms were incorporated in the a??Si: H film even in the SiH4 (1 vol)??D2 (4 vol) mixture. With increase in the rf power, the H to D ratio in the film approaches the ratio in the gas for rf power ranges relatively high in ...