ACS Nano 2008-12-23

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Di Wei, Yan Zhang, Yang Yang, David G Hasko, DaPing Chu, Ken B K Teo, Gehan A J Amaratunga, William I Milne

Index: ACS Nano 2(12) , 2526-30, (2008)

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Abstract

We have fabricated single-walled carbon nanotube (SWNT) field effect transistors (FETs) with molybdenum source and drain contacts. Normally, these devices operate only as p-channel transistors, however, after polystyrene latex nanospheres were attached to the nanotubes close to the contacts, they changed to ambipolar operation. This strategy provides a simple method to modify the electrical behavior of unipolar SWNT-FETs by influencing the gate-channel electric field distribution and offset charge, so enabling complementary circuits to be fabricated.

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