A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis.

Beomjin Park, Jaesung Park, Jin Gyeong Son, Yong-Jin Kim, Seong Uk Yu, Hyo Ju Park, Dong-Hun Chae, Jinseok Byun, Gumhye Jeon, Sung Huh, Seoung-Ki Lee, Artem Mishchenko, Seung Hyun, Tae Geol Lee, Sang Woo Han, Jong-Hyun Ahn, Zonghoon Lee, Chanyong Hwang, Konstantin S Novoselov, Kwang S Kim, Byung Hee Hong, Jin Kon Kim

Index: ACS Nano 9 , 8352-60, (2015)

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Abstract

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.