Journal of Nanoscience and Nanotechnology 2012-06-01

Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.

Yiming Li, Hui-Wen Cheng, Chi-Hong Hwang

Index: J. Nanosci. Nanotechnol. 12(6) , 4485-8, (2012)

Full Text: HTML

Abstract

The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigmaVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.

Related Compounds

  • Nitridotitanium

Related Articles:

Effect of surface treatment on bond strength of Ti-10Ta-10Nb to low-fusing porcelain.

2013-02-01

[J. Prosthet. Dent. 109(2) , 95-105, (2013)]

Electrically conductive and mechanically elastic titanium nitride ceramic microsprings.

2014-06-01

[J. Nanosci. Nanotechnol. 14(6) , 4292-6, (2014)]

Characteristic corrosion resistance of nanocrystalline TiN films prepared by high density plasma reactive magnetron sputtering.

2013-07-01

[J. Nanosci. Nanotechnol. 13(7) , 4601-7, (2013)]

Enhancement of biocompatibility of metal implants by nanoscale tiN/NbN multilayer coatings.

2013-07-01

[J. Nanosci. Nanotechnol. 13(7) , 4565-72, (2013)]

Surface analysis and osteoblasts response of a titanium oxi-carbide film deposited on titanium by ion plating plasma assisted (IPPA).

2011-10-01

[J. Nanosci. Nanotechnol. 11(10) , 8754-62, (2011)]

More Articles...