Triphenylgermanium hydride

[ Boiling Point ]:
128-9ºC 0,03mm

[ Melting Point ]:
40-43ºC(lit.)

[ Molecular Formula ]:
C₁₈H₁₆Ge

[ Molecular Weight ]:
304.96000

[ Flash Point ]:
>110ºC

[ Exact Mass ]:
306.04600

[ LogP ]:
4.19210

[ Index of Refraction ]:
1.6187

Click to get detail MSDS

[ Symbol ]:

GHS07

[ Signal Word ]:
Warning

[ Hazard Statements ]:
H302-H312-H332

[ Precautionary Statements ]:
P280

[ Personal Protective Equipment ]:
dust mask type N95 (US);Eyeshields;Gloves

[ Hazard Codes ]:
Xn: Harmful;

[ Risk Phrases ]:
R20/21/22

[ Safety Phrases ]:
36

[ RIDADR ]:
NONH for all modes of transport

[ WGK Germany ]:
3

Click to get detail synthetic route

Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium.

Nano Lett. 16 , 374-80, (2016)

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon ...

Synthesis of silicon-germanium axial nanowire heterostructures in a solvent vapor growth system using indium and tin catalysts.

Phys. Chem. Chem. Phys. 17(10) , 6919-24, (2015)

Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated cat...

Synthesis of a rhodium(i) germyl complex: a useful tool for C-H and C-F bond activation reactions.

Dalton Trans. 45 , 4716-28, (2016)

The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl ...

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