Journal of Nanoscience and Nanotechnology 2013-11-01

Negative gate bias and light illumination-induced hump in amorphous InGaZnO thin film transistor.

Jae-Hong Jeon, Seung-Bum Seo, Han-Sung Park, Hee-Hwan Choe, Jong-Hyun Seo, Kee-Chan Park, Sang-Hee Ko Park

文献索引：J. Nanosci. Nanotechnol. 13(11) , 7535-9, (2013)

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摘要

While observing the transfer characteristics of a-IGZO TFTs, it was noticed that a hump occurred in the subthreshold regime after light and bias stress. This study analyzes the mechanism of the hump occurrence. It was determined that hump characteristics were related with parasitic TFTs which formed at the peripheral edges parallel with the channel direction. It seems that the negative shift of the transfer characteristics of parasitic TFTs was larger than that of the main TFT under light and bias stress. Therefore, the difference in the negative shift between the main TFT and the parasitic TFT was the origin of the hump occurrence. We investigated the instability of a-IGZO TFTs under negative gate bias with light illumination for various channel structures in order to verify the above mechanism.

相关化合物

  • 氧化锌
  • 镓
  • 铟
  • 氧化铟
  • 氧化镓

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