Optics Express 2013-02-11

Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.

Elad Gross, Amir Nevet, Asaf Pesach, Eva Monroy, Shmuel E Schacham, Meir Orenstein, Mordechai Segev, Gad Bahir

文献索引:Opt. Express 21(3) , 3800-8, (2013)

全文:HTML全文

摘要

We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carried out through a novel interferometric technique. The measured interferogram yields a change in the refractive index varying from -5 × 10(-3) to 6 × 10(-3) as a function of the wavelength, introduced by the intersubband resonance at 1.5 µm. These results compare well with those derived using Kramers-Kronig transform of the measured absorption spectrum.


相关化合物

  • 氮化铝

相关文献:

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.

2010-01-01

[IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57(1) , 82-7, (2010)]

Hybrid density functional theory studies of AlN and GaN under uniaxial strain.

2013-01-30

[J. Phys. Condens. Matter 25(4) , 045801, (2013)]

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.

2010-01-01

[IEEE Trans. Ultrason. Ferroelectr. Freq. Control 57(1) , 46-51, (2010)]

FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100).

2014-01-01

[Ultrasonics 54(1) , 291-5, (2014)]

Patterned growth and field-emission properties of AlN nanocones.

2009-09-01

[ACS Appl. Mater. Interfaces 1(9) , 1927-30, (2009)]

更多文献...