Memristors: Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches (Adv. Electron. Mater. 3/2018)
Yu Zhang, Xiaoyang Lin, Jean-Paul Adam, Guillaume Agnus, Wang Kang, Wenlong Cai, Jean-Rene Coudevylle, Nathalie Isac, Jianlei Yang, Huaiwen Yang, Kaihua Cao, Hushan Cui, Deming Zhang, Youguang Zhang, Chao Zhao, Weisheng Zhao, Dafine Ravelosona
文献索引：10.1002/aelm.201870014
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摘要
In article 1700461, Weisheng Zhao and co-workers demonstrate a heterogeneous memristive device based on a magnetic tunnel junction nanopillar surrounded by resistive filaments. It features spin transfer torque fast switching for computation together with multilevel resistive switching for non-volatile memory, providing perspectives to achieve emerging computing paradigms and overcome the power dissipation bottleneck, e.g., logic-in-memory and neuromorphic computing.