Zizhong Zhang, Lin Huang, Jiangjie Zhang, Fengjiao Wang, Yanyu Xie, Xiaotong Shang, Yuyao Gu, Huibo Zhao, Xuxu Wang
Index: 10.1016/j.apcatb.2018.04.006
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Construction of heterostructure by intimately interfacing two or more semiconductor materials with different geometrical and electronically energetic alignments at nanoscale is very important to achieve the composite photocatalysts with a high photocatalytic efficiency. Here, we in-situ prepared an intimate contact MoS2/ZnIn2S4 heterostructure photocatalyst by a one-pot solvothermal reaction. The MoS2/ZnIn2S4 heterostructure significantly enhanced the photocatalytic H2 evolution of ZnIn2S4 under visible light illumination. The hydrogen evolution rate reaches 3891.6 μmol g-1 h-1 over 5%-MoS2/ZnIn2S4, which exceeded the photocatalytic activity of Pt-loaded ZnIn2S4 samples. The subtle atomic-level intimate contact and strong interactions between ZnIn2S4 and MoS2 was ascribed to a highly efficient charge carrier separation and thus photocatalytic activity for MoS2/ZnIn2S4. These results provide inspiration for the design of composited photocatalysts with efficient photocatalytic H2 evolution.
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