Triethylgallium
Triethylgallium structure
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Common Name | Triethylgallium | ||
|---|---|---|---|---|
| CAS Number | 1115-99-7 | Molecular Weight | 156.906 | |
| Density | 1.058 g/cm3 | Boiling Point | 143ºC | |
| Molecular Formula | C6H15Ga | Melting Point | -82.3ºC | |
| MSDS | Chinese USA | Flash Point | -18ºC | |
| Symbol |
GHS02, GHS05 |
Signal Word | Danger | |
| Name | triethylgallane |
|---|---|
| Synonym | More Synonyms |
| Density | 1.058 g/cm3 |
|---|---|
| Boiling Point | 143ºC |
| Melting Point | -82.3ºC |
| Molecular Formula | C6H15Ga |
| Molecular Weight | 156.906 |
| Flash Point | -18ºC |
| Exact Mass | 156.042953 |
| LogP | 2.54090 |
| Symbol |
GHS02, GHS05 |
|---|---|
| Signal Word | Danger |
| Hazard Statements | H225-H250-H261-H314 |
| Supplemental HS | Reacts violently with water. |
| Precautionary Statements | P210-P222-P231 + P232-P280-P305 + P351 + P338-P422 |
| Risk Phrases | R14/15 |
| Safety Phrases | 16-36/37/39-43 |
| RIDADR | UN 3203 |
| Hazard Class | 4.2 |
| HS Code | 2931900090 |
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Triethylgallium CAS#:1115-99-7 |
| Literature: US2004/122248 A1, ; Page 3; 5-6 ; |
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Triethylgallium CAS#:1115-99-7 |
| Literature: Journal of the American Chemical Society, , vol. 54, p. 182,184 |
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Triethylgallium CAS#:1115-99-7 |
| Literature: Journal of Organometallic Chemistry, , vol. 696, # 10 p. 2238 - 2251 |
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~64%
Triethylgallium CAS#:1115-99-7
Detail
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| Literature: Zakharkin; Gavrilenko Synthesis and Reactivity in Inorganic and Metal-Organic Chemistry, 1999 , vol. 29, # 7 p. 1243 - 1247 |
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Triethylgallium CAS#:1115-99-7 |
| Literature: Russian Chemical Bulletin, , vol. 46, # 2 p. 379 - 380 |
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Triethylgallium CAS#:1115-99-7 |
| Literature: Journal of the American Chemical Society, , vol. 54, p. 182 - 186 Ga: MVol., 40, page 92 - 94 |
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~59%
Detail
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| Literature: Zakharkin; Gavrilenko Synthesis and Reactivity in Inorganic and Metal-Organic Chemistry, 1999 , vol. 29, # 7 p. 1243 - 1247 |
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~%
Triethylgallium CAS#:1115-99-7 |
| Literature: GB820146 , ; |
| Precursor 9 | |
|---|---|
| DownStream 5 | |
CAS#:93-55-0
CAS#:7338-94-5
CAS#:30914-08-0![[Et2Ga(N(cyclohexyl)2)]2 structure](https://image.chemsrc.com/caspic/325/174837-78-6.png)
CAS#:174837-78-6
CAS#:3531-44-0| HS Code | 2931900090 |
|---|---|
| Summary | 2931900090. other organo-inorganic compounds. VAT:17.0%. Tax rebate rate:13.0%. Supervision conditions:AB(certificate of inspection for goods inward,certificate of inspection for goods outward). MFN tariff:6.5%. General tariff:30.0% |
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Solution phase synthesis of indium gallium phosphide alloy nanowires.
ACS Nano 9 , 3951-60, (2015) The tunable physical and electronic structure of III-V semiconductor alloys renders them uniquely useful for a variety of applications, including biological imaging, transistors, and solar energy conv... |
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M. Yamaguchi
Sci. Synth. 7 , 387, (2004)
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Vossen, J. L.; Kern, W.
Thin Film Processes II 1991 , 866
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| Triethyl gallium |
| Triethylgallium |
| EINECS 214-232-7 |
| Gallium, triethyl- |
| Gallium,triethyl |