Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)lead(ii)
Modify Date: 2024-01-02 17:43:50
Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)lead(ii) structure
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Common Name | Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)lead(ii) | ||
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| CAS Number | 14319-13-2 | Molecular Weight | 691.73100 | |
| Density | N/A | Boiling Point | 370ºC (subl. 210ºC/0.2mm) | |
| Molecular Formula | C33H60LaO6 | Melting Point | 227-231ºC | |
| MSDS | USA | Flash Point | 370ºC | |
| Name | Lanthanum, tris(dipivaloylmethanato) |
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| Synonym | More Synonyms |
| Boiling Point | 370ºC (subl. 210ºC/0.2mm) |
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| Melting Point | 227-231ºC |
| Molecular Formula | C33H60LaO6 |
| Molecular Weight | 691.73100 |
| Flash Point | 370ºC |
| Exact Mass | 691.34500 |
| PSA | 102.42000 |
| LogP | 7.82070 |
| Personal Protective Equipment | Eyeshields;Gloves;type N95 (US);type P1 (EN143) respirator filter |
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| Hazard Codes | T |
| Risk Phrases | R36/37/38;R20/22 |
| Safety Phrases | S53-S45 |
| RIDADR | NONH for all modes of transport |
| WGK Germany | 3 |
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Study on the precursors for La2O3 thin films deposited on silicon substrate. Jun J, et al.
J. Mater. Sci. Lett. 21(23) , 1847-1849, (2002)
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MOCVD of lanthanum oxides from La (tmhd)3 and La (tmod)3 precursors: A thermal and kinetic investigation. Bedoya C, et al.
Chem. Vap. Deposition 12(1) , 46-53, (2006)
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Structural and electrical properties of a La2O3 thin film as a gate dielectric. Jun JH, et al.
J. Korean Phys. Soc. 11(6) , (2002)
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| [Lanthanum(III) thd] |
| RESOLVE-AL(TM) LA |
| LEAD BIS(DIPIVALOYLMETHANATE) |
| PB(TMHD)2 |
| La(tmhd)3 (Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum |
| Resolve-al la |
| MFCD00010466 |
| Tris(dipivaloylmethanato)lanthanum |
| LA(TMHD)3 |
| LANTHANUM TRIS (DIPIVAYLMETHANATE) |
| La(C11H19O2)3 |