Tetrakis(dimethylamido)hafnium structure
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Common Name | Tetrakis(dimethylamido)hafnium | ||
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CAS Number | 19782-68-4 | Molecular Weight | 354.79300 | |
Density | 1.098 g/mL at 25 °C | Boiling Point | 6.1ºC at 760 mmHg | |
Molecular Formula | C8H24HfN4 | Melting Point | 26-29ºC(lit.) | |
MSDS | Chinese USA | Flash Point | 109 °F | |
Symbol |
GHS02, GHS05 |
Signal Word | Danger |
Name | tetrakis(dimethylamido)hafnium(iv), |
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Synonym | More Synonyms |
Density | 1.098 g/mL at 25 °C |
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Boiling Point | 6.1ºC at 760 mmHg |
Melting Point | 26-29ºC(lit.) |
Molecular Formula | C8H24HfN4 |
Molecular Weight | 354.79300 |
Flash Point | 109 °F |
Exact Mass | 356.14700 |
PSA | 12.96000 |
LogP | 0.04920 |
Appearance of Characters | crystal | colorless to pale yellow |
Symbol |
GHS02, GHS05 |
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Signal Word | Danger |
Hazard Statements | H228-H261-H314 |
Supplemental HS | Reacts violently with water. |
Precautionary Statements | P210-P231 + P232-P280-P305 + P351 + P338-P370 + P378-P402 + P404 |
Personal Protective Equipment | Eyeshields;Faceshields;full-face particle respirator type N100 (US);Gloves;respirator cartridge type N100 (US);type P1 (EN143) respirator filter;type P3 (EN 143) respirator cartridges |
Hazard Codes | F: Flammable;C: Corrosive; |
Risk Phrases | R11 |
Safety Phrases | 6-26-36/37/39-43-45 |
RIDADR | UN 3396 4 |
WGK Germany | 3 |
Appl. Phys. Lett. 91 , 193503, (2007)
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Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films Hausmann DM, Gordon RG
J. Cryst. Growth 249 , 251-261, (2003)
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The Savannah ALD System - An Excellent Tool for Atomic Layer Deposition Monsma D, Becker J
Material Matters 1(3) , 5, (2006)
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MFCD01862473 |