(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-Heneicosafluorododecyl)phosphonic acid
Modify Date: 2024-04-06 00:20:39
(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-Heneicosafluorododecyl)phosphonic acid structure
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Common Name | (3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-Heneicosafluorododecyl)phosphonic acid | ||
|---|---|---|---|---|
| CAS Number | 252237-39-1 | Molecular Weight | 628.11 | |
| Density | N/A | Boiling Point | N/A | |
| Molecular Formula | C12H6F21O3P | Melting Point | N/A | |
| MSDS | Chinese USA | Flash Point | N/A | |
| Symbol |
GHS07 |
Signal Word | Warning | |
| Name | (3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-Heneicosafluorododecyl)phosphonic acid |
|---|
| Molecular Formula | C12H6F21O3P |
|---|---|
| Molecular Weight | 628.11 |
| Appearance of Characters | powder |
| Symbol |
GHS07 |
|---|---|
| Signal Word | Warning |
| Hazard Statements | H315-H319-H335 |
| Precautionary Statements | P280-P305 + P351 + P338-P337 + P313 |
| RIDADR | NONH for all modes of transport |
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Fluoroalkylphosphonic acid self-assembled monolayer gate dielectrics for threshold-voltage control in low-voltage organic thin-film transistors Kraft, U.; et. al.
J. Mater. Chem. 20 , 6416-6418, (2010)
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