Indium structure
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Common Name | Indium | ||
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CAS Number | 7440-74-6 | Molecular Weight | 114.81800 | |
Density | 7.3 g/mL at 25 °C(lit.) | Boiling Point | 2000 °C | |
Molecular Formula | In | Melting Point | 156 °C | |
MSDS | Chinese USA | Flash Point | 2072°C | |
Symbol |
GHS07 |
Signal Word | Warning |
Name | indium atom |
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Synonym | More Synonyms |
Density | 7.3 g/mL at 25 °C(lit.) |
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Boiling Point | 2000 °C |
Melting Point | 156 °C |
Molecular Formula | In |
Molecular Weight | 114.81800 |
Flash Point | 2072°C |
Exact Mass | 114.90400 |
Vapour Pressure | <0.01 mm Hg ( 25 °C) |
Stability | Stable. Incompatible with strong acids, strong oxidizing agents, sulfur. |
Water Solubility | insoluble |
CHEMICAL IDENTIFICATION
HEALTH HAZARD DATAACUTE TOXICITY DATA
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Symbol |
GHS07 |
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Signal Word | Warning |
Hazard Statements | H302 + H312 + H332-H315-H319-H335 |
Precautionary Statements | P261-P280-P305 + P351 + P338 |
Personal Protective Equipment | dust mask type N95 (US);Eyeshields;Gloves |
Hazard Codes | Xn:Harmful |
Risk Phrases | R20/21/22;R36/37/38 |
Safety Phrases | S9-S16-S36/37/39-S36-S26-S45-S28 |
RIDADR | UN 3089 4.1/PG 2 |
WGK Germany | 3 |
RTECS | NL1050000 |
Packaging Group | III |
Hazard Class | 8 |
Precursor 8 | |
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DownStream 9 | |
Aqueous synthesis of highly luminescent AgInS₂-ZnS quantum dots and their biological applications.
Nanoscale 5(6) , 2322-7, (2013) Highly emissive and air-stable AgInS2-ZnS quantum dots (ZAIS QDs) with quantum yields of up to 20% have been successfully synthesized directly in aqueous media in the presence of polyacrylic acid (PAA... |
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Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.
Opt. Express 21(3) , 3138-44, (2013) We demonstrate localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) using silver (Ag) and platinum (Pt) nanoparticles (NPs). The optical output power of NUV-LEDs ... |
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Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
J. Nanosci. Nanotechnol. 13(1) , 564-7, (2013) We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3... |
EINECS 231-180-0 |
UNII-045A6V3VFX |
MFCD00134048 |
Indium |
indio |
indium powder |