Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)lead(ii)

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Names

[ Name ]:
Bis(2,2,6,6-tetramethyl-3,5-heptanedionato)lead(ii)

[Synonym ]:
[Lanthanum(III) thd]
RESOLVE-AL(TM) LA
LEAD BIS(DIPIVALOYLMETHANATE)
PB(TMHD)2
La(tmhd)3 (Tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum
Resolve-al la
MFCD00010466
Tris(dipivaloylmethanato)lanthanum
LA(TMHD)3
LANTHANUM TRIS (DIPIVAYLMETHANATE)
La(C11H19O2)3

Chemical & Physical Properties

[ Boiling Point ]:
370ºC (subl. 210ºC/0.2mm)

[ Melting Point ]:
227-231ºC

[ Molecular Formula ]:
C₃₃H₆₀LaO₆

[ Molecular Weight ]:
691.73100

[ Flash Point ]:
370ºC

[ Exact Mass ]:
691.34500

[ PSA ]:
102.42000

[ LogP ]:
7.82070

MSDS

Click to get detail MSDS

Safety Information

[ Personal Protective Equipment ]:
Eyeshields;Gloves;type N95 (US);type P1 (EN143) respirator filter

[ Hazard Codes ]:
T

[ Risk Phrases ]:
R36/37/38;R20/22

[ Safety Phrases ]:
S53-S45

[ RIDADR ]:
NONH for all modes of transport

[ WGK Germany ]:
3

Articles

Study on the precursors for La₂O₃ thin films deposited on silicon substrate. Jun J, et al.

J. Mater. Sci. Lett. 21(23) , 1847-1849, (2002)

MOCVD of lanthanum oxides from La (tmhd)₃ and La (tmod)₃ precursors: A thermal and kinetic investigation. Bedoya C, et al.

Chem. Vap. Deposition 12(1) , 46-53, (2006)

Structural and electrical properties of a La₂O₃ thin film as a gate dielectric. Jun JH, et al.

J. Korean Phys. Soc. 11(6) , (2002)

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