Indium phosphide (InP)

[ Density]:
4,787 g/cm3

[ Melting Point ]:
1070°C

[ Molecular Formula ]:
H₂InP

[ Molecular Weight ]:
147.80800

[ Exact Mass ]:
147.89300

[ LogP ]:
0.32580

[ Appearance of Characters ]:
pieces

Click to get detail MSDS

CHEMICAL IDENTIFICATION

RTECS NUMBER :

NL1800000

CHEMICAL NAME :

Indium phosphide

CAS REGISTRY NUMBER :

22398-80-7

LAST UPDATED :

199712

DATA ITEMS CITED :

3

[ Symbol ]:

GHS08

[ Signal Word ]:
Danger

[ Hazard Statements ]:
H350-H361f-H372

[ Precautionary Statements ]:
P201-P281-P308 + P313

[ Target Organs ]:
Lungs

[ Hazard Codes ]:
T

[ Safety Phrases ]:
S24/25

[ RIDADR ]:
3288

[ WGK Germany ]:
3

[ RTECS ]:
NL1800000

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

Opt. Express 20(17) , 19279-88, (2012)

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thic...

Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.

J. Nanosci. Nanotechnol. 13(1) , 564-7, (2013)

We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3...

Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.

Small 8(12) , 1851-6, (2012)

Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These ...

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