Indium phosphide (InP)
Indium phosphide (InP) structure
|
Common Name | Indium phosphide (InP) | ||
|---|---|---|---|---|
| CAS Number | 22398-80-7 | Molecular Weight | 147.80800 | |
| Density | 4,787 g/cm3 | Boiling Point | N/A | |
| Molecular Formula | H2InP | Melting Point | 1070°C | |
| MSDS | Chinese USA | Flash Point | N/A | |
| Symbol |
GHS08 |
Signal Word | Danger | |
| Name | indium phosphide |
|---|---|
| Synonym | More Synonyms |
| Density | 4,787 g/cm3 |
|---|---|
| Melting Point | 1070°C |
| Molecular Formula | H2InP |
| Molecular Weight | 147.80800 |
| Exact Mass | 147.89300 |
| LogP | 0.32580 |
| Appearance of Characters | pieces |
CHEMICAL IDENTIFICATION
|
| Symbol |
GHS08 |
|---|---|
| Signal Word | Danger |
| Hazard Statements | H350-H361f-H372 |
| Precautionary Statements | P201-P281-P308 + P313 |
| Target Organs | Lungs |
| Hazard Codes | T |
| Safety Phrases | S24/25 |
| RIDADR | 3288 |
| WGK Germany | 3 |
| RTECS | NL1800000 |
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InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Opt. Express 20(17) , 19279-88, (2012) We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thic... |
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Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
J. Nanosci. Nanotechnol. 13(1) , 564-7, (2013) We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3... |
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Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.
Small 8(12) , 1851-6, (2012) Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These ... |
| MFCD00016153 |
| polycrystallinelump |
| INDIUM(III) PHOSPHIDE |
| Indium phosphide (InP) |
| EINECS 244-959-5 |
| Phosphinidyneindium(III) |
| InP |
| indiummonophosphide |
| Indiumphsophidewafer |
| Indium phosphide wafer |
- Shanghai Nianxing Industrial Co., Ltd
- China
- Product Name: Indium phosphide (InP)
- Price: Negotiable
- Purity: 99.998%
- Delivery: 10 Day
- Contact: Huang
- Email: sales@echemcloud.com
- Shanghai Jizhi Biochemical Technology Co., Ltd
- China
- Product Name: Indium phosphide (InP)
- Price: ￥1338.0/1g ￥4758.0/5g
- Purity: 98.0%
- Delivery: Inquiry
- Contact: Liu jia
- Email: 2130147988@qq.com
- Dayang Chem (Hangzhou) Co., Ltd.
- China
- Product Name: Indium phosphide (InP)
- Price: $Inquiry/100g $Inquiry/1kg $Inquiry/100kg $Inquiry/1000kg
- Purity: 98.0%
- Delivery: Inquiry
- Contact: Ms Wang
- Email: enquiry@dycnchem.com
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