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三苯基氢化锗

三苯基氢化锗名称

[ CAS 号 ]:
2816-43-5

[ 中文名 ]:
三苯基氢化锗

[ 英文名 ]:
Triphenylgermanium hydride

[英文别名 ]:

EINECS 220-569-0
TRIPHENYL GERMANIUM
GERMANIUM TRIPHENYL
MFCD00046034
triphenyl germanium hydride
Triphenylgermanyl hydride
triphenylgermanne

三苯基氢化锗物理化学性质

[ 沸点 ]:
128-9ºC 0,03mm

[ 熔点 ]:
40-43ºC(lit.)

[ 分子式 ]:
C₁₈H₁₆Ge

[ 分子量 ]:
304.96000

[ 闪点 ]:
>110ºC

[ 精确质量 ]:
306.04600

[ LogP ]:
4.19210

[ 外观性状 ]:
固体

[ 折射率 ]:
1.6187

[ 储存条件 ]:
室温，密封，干燥，惰性气体

三苯基氢化锗MSDS

三苯基氢化锗安全信息

[ 符号 ]:

GHS07

[ 信号词 ]:
Warning

[ 危害声明 ]:
H302-H312-H332

[ 警示性声明 ]:
P280

[ 个人防护装备 ]:
dust mask type N95 (US);Eyeshields;Gloves

[ 危害码 (欧洲) ]:
Xn: Harmful;

[ 风险声明 (欧洲) ]:
R20/21/22

[ 安全声明 (欧洲) ]:
36

[ 危险品运输编码 ]:
NONH for all modes of transport

[ WGK德国 ]:
3

三苯基氢化锗合成路线

三苯基氢化锗文献

Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium.

Nano Lett. 16 , 374-80, (2016)

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon ...

Synthesis of silicon-germanium axial nanowire heterostructures in a solvent vapor growth system using indium and tin catalysts.

Phys. Chem. Chem. Phys. 17(10) , 6919-24, (2015)

Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated cat...

Synthesis of a rhodium(i) germyl complex: a useful tool for C-H and C-F bond activation reactions.

Dalton Trans. 45 , 4716-28, (2016)

The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl ...

更多文献

三苯基氢化锗

三苯基氢化锗名称

三苯基氢化锗物理化学性质

三苯基氢化锗MSDS

详细MSDS(安全技术说明书)

三苯基氢化锗安全信息

三苯基氢化锗合成路线

详细合成路线

三苯基氢化锗文献

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