三苯基氢化锗

[ 沸点 ]:
128-9ºC 0,03mm

[ 熔点 ]:
40-43ºC(lit.)

[ 分子式 ]:
C₁₈H₁₆Ge

[ 分子量 ]:
304.96000

[ 闪点 ]:
>110ºC

[ 精确质量 ]:
306.04600

[ LogP ]:
4.19210

[ 外观性状 ]:
固体

[ 折射率 ]:
1.6187

[ 储存条件 ]:
室温， 密封， 干燥， 惰性气体

详细MSDS(安全技术说明书)

[ 符号 ]:

GHS07

[ 信号词 ]:
Warning

[ 危害声明 ]:
H302-H312-H332

[ 警示性声明 ]:
P280

[ 个人防护装备 ]:
dust mask type N95 (US);Eyeshields;Gloves

[ 危害码 (欧洲) ]:
Xn: Harmful;

[ 风险声明 (欧洲) ]:
R20/21/22

[ 安全声明 (欧洲) ]:
36

[ 危险品运输编码 ]:
NONH for all modes of transport

[ WGK德国 ]:
3

详细合成路线

Solvent Vapor Growth of Axial Heterostructure Nanowires with Multiple Alternating Segments of Silicon and Germanium.

Nano Lett. 16 , 374-80, (2016)

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon ...

Synthesis of silicon-germanium axial nanowire heterostructures in a solvent vapor growth system using indium and tin catalysts.

Phys. Chem. Chem. Phys. 17(10) , 6919-24, (2015)

Here we describe a relatively facile synthetic protocol for the formation of Si-Ge and Si-Ge-Si1-xGex axial nanowire heterostructures. The wires are grown directly on substrates with an evaporated cat...

Synthesis of a rhodium(i) germyl complex: a useful tool for C-H and C-F bond activation reactions.

Dalton Trans. 45 , 4716-28, (2016)

The dihydrido germyl complex cis,fac-[Rh(GePh3)(H)2(PEt3)3] (2) was synthesized by an oxidative addition of HGePh3 at [Rh(H)(PEt3)3] (1). Treatment of 2 with neohexene generated the rhodium(i) germyl ...

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公司名：上海化源世纪贸易有限公司

区域：上海市普陀区

价格：

联系人：徐经理

产品详情：三苯基氢化锗

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公司名：上海阿拉丁生化科技股份有限公司

区域：上海市浦东新区

价格：
￥1519.9/1g ￥479.9/250mg ￥需询单/1g ￥需询单/1g

联系人：阿拉丁

产品详情：氢化三苯锗

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