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5122-95-2

5122-95-2 structure
5122-95-2 structure

Name Biphenyl-3-boronic acid
Synonyms RECHEM AH PB 0085
3-Biphenylboronic
Boronic acid, B-[1,1'-biphenyl]-3-yl
3-Biphenylboronic Acid
[1,1'-Diphenyl]-3-ylboronic acid
(3-Phenylphenyl)boronic acid
biphenyl-3-ylboronic acid
3- biphenylboric acid
Biphenyl-3-boronicaci
BIPHENYL-3-BORONIC ACID
3-Biphenylboronic acid (7CI, 8CI)
3-Biphenylboronic acid
CHEMBRDG-BB
3-Biphenylboronicacid
3-Biphenyl boronic acid
Biphenyl-3-boronica
(1,1'-BIPHENYL-3-YL)BORONIC ACID
(1,1’-Biphenyl-3-yl)boronic acid
(3-phenylphenyl)boronic acid
2-phenylphenyl hydrogen boronate
3-Biphenylboronic Acid (contains vying amounts of Anhydride)
3-BIPHENYLBORONIC ACID; [1,1'-BIPHENYL]-3-YLBORONIC ACID
5-2 Biphenyl-3-boronic acid
3-Biphenylylboronic acid
MFCD01318102
Biphenyl-3-bronic acid
Biphenyl-3-ylbronic acid
[1,1'-biphenyl]-3-ylboronic acid
3-Biphenylboroni(ccontains vying amounts of Anhydride)
3-(Dihydroxyboryl)-1,1′-biphenyl
biphenyl-3-ylboronic acid(SALTDATA: FREE)
3-Phenylbenzeneboronic acid
Density 1.2±0.1 g/cm3
Boiling Point 411.0±38.0 °C at 760 mmHg
Melting Point 193-198 °C(lit.)
Molecular Formula C12H11BO2
Molecular Weight 198.025
Flash Point 202.3±26.8 °C
Exact Mass 198.085205
PSA 40.46000
LogP 3.35
Vapour Pressure 0.0±1.0 mmHg at 25°C
Index of Refraction 1.610
Storage condition 0-6°C
Personal Protective Equipment Eyeshields;Gloves;type N95 (US);type P1 (EN143) respirator filter
Hazard Codes Xi:Irritant
Risk Phrases R36/37/38
Safety Phrases S37/39-S26
RIDADR NONH for all modes of transport
WGK Germany 3
HS Code 2931900090

~55%

5122-95-2 structure

5122-95-2

Literature: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.; SUZUKI, Hiroki; KAWAKAMI, Sachiko; OHSAWA, Nobuharu; SUZUKI, Tsunenori; SEO, Satoshi Patent: WO2010/5066 A1, 2010 ; Location in patent: Page/Page column 178-179 ;

~72%

5122-95-2 structure

5122-95-2

Literature: Dingemans, Theo J.; Murthy, N. Sanjeeva; Samulski, Edward T. Journal of Physical Chemistry B, 2001 , vol. 105, # 37 p. 8845 - 8860

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5122-95-2 structure

5122-95-2

Literature: Wang, Wei-Bo; Curtin, Michael L.; Fakhoury, Stephen A.; Gwaltney II, Stephen L.; Hasvold, Lisa A.; Hutchins, Charles W.; Li, Qun; Lin, Nan-Horng; Nelson, Lissa Taka Jennings; O'Connor, Steve; Sham, Hing L.; Sullivan, Gerard M.; Wang, Gary T.; Wang, Xilu Patent: US2002/19527 A1, 2002 ;

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5122-95-2 structure

5122-95-2

Literature: Yabroff; Branch; Bettman Journal of the American Chemical Society, 1934 , vol. 56, p. 1850,1856

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5122-95-2 structure

5122-95-2

Literature: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.; KIM, Chi-sik; KIM, Hee-sook; LEE, Hyo-jung; KIM, Hye-mi; MOON, Doo-hyeon; HWANG, Soo-jin; LEE, Seon-woo; YANG, Soo-jin; LEE, Su-hyun; LEE, Kyung-joo; SHIN, Hyo-nim; PARK, Kyoung-jin; CHO, Young-jun; KWON, Hyuck-jun; KIM, Bong-ok Patent: WO2013/12298 A1, 2013 ;

~39%

5122-95-2 structure

5122-95-2

Literature: Suenaga, Hikaru; Mikami, Masafumi; Yamamoto, Hiromasa; Harada, Takaaki; Shinkai, Seiji Journal of the Chemical Society, Perkin Transactions 1: Organic and Bio-Organic Chemistry (1972-1999), 1995 , # 13 p. 1733 - 1738

~%

5122-95-2 structure

5122-95-2

Literature: ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD.; KIM, Chi-sik; KIM, Hee-sook; LEE, Hyo-jung; KIM, Hye-mi; MOON, Doo-hyeon; HWANG, Soo-jin; LEE, Seon-woo; YANG, Soo-jin; LEE, Su-hyun; LEE, Kyung-joo; SHIN, Hyo-nim; PARK, Kyoung-jin; CHO, Young-jun; KWON, Hyuck-jun; KIM, Bong-ok Patent: WO2013/12298 A1, 2013 ;
HS Code 2931900090
Summary 2931900090. other organo-inorganic compounds. VAT:17.0%. Tax rebate rate:13.0%. Supervision conditions:AB(certificate of inspection for goods inward,certificate of inspection for goods outward). MFN tariff:6.5%. General tariff:30.0%
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