![[Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3]结构式](https://www.chemsrc.com/caspic/266/1494-07-1.png)
[Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3]结构式
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常用名 | [Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3] | 英文名 | [Mo(1,2-bis(trifluoromethyl)ethylene-1,2-dithiolate)3] |
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| CAS号 | 1494-07-1 | 分子量 | 774.430 | |
| 密度 | N/A | 沸点 | N/A | |
| 分子式 | C12F18MoS6 | 熔点 | N/A | |
| MSDS | 中文版 美版 | 闪点 | N/A | |
| 符号 |
GHS07 |
信号词 | Warning |
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Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers.
J. Am. Chem. Soc. 131 , 12530, (2009) Experimental and theoretical results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)(3)), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopan... |
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Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers. Qi Y, et al.
J. Am. Chem. Soc.
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Pentacene organic field-effect transistors with doped electrode-semiconductor contacts Tiwari SP, et al.
Org. Electron.
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A molybdenum dithiolene complex as p-dopant for hole-transport materials: A multitechnique experimental and theoretical investigation. Qi Y, et al.
Chem. Mater.
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Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering Zhao W, et al.
Appl. Phys. Lett.
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A Molybdenum Dithiolene Complex as p-Dopant for Hole-Transport Materials: A Multitechnique Experimental and Theoretical Investigation Qi, Y.; et. al.
Chem. Mater. 22 , 524, (2010)
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Pentacene organic field-effect transistors with doped electrode-semiconductor contacts Tiwari, S. P.; et. al.
Org. Electron. 11 , 860, (2010)
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Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering Zhao, W.; et. al.
Appl. Phys. Lett. 97 , 123305/1, (2010)
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Use of a high electron-affinity molybdenum dithiolene complex to p-dope hole-transport layers. Qi Y, et al.
J. Am. Chem. Soc. 131(35) 12530-12531
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Pentacene organic field-effect transistors with doped electrode-semiconductor contacts Tiwari SP, et al.
Org. Electron. 11(5) 860-863
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