gallium phosphide
gallium phosphide structure
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Common Name | gallium phosphide | ||
|---|---|---|---|---|
| CAS Number | 12063-98-8 | Molecular Weight | 104.72900 | |
| Density | 4.13 g/mL at 25 °C | Boiling Point | N/A | |
| Molecular Formula | GaH4P | Melting Point | 1480ºC | |
| MSDS | Chinese USA | Flash Point | 230 °F | |
| Symbol |
GHS07 |
Signal Word | Warning | |
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Resonance enhanced large third order nonlinear optical response in slow light GaInP photonic-crystal waveguides.
Opt. Express 18(6) , 5746-53, (2010) We report a large nonlinear response in a 1.3mm long GaInP photonic crystal waveguide. The wide band gap of GaInP (1.9 eV) ensures that no two photon absorption takes place for photons at 1.55mm improving the nonlinear performance. The nonlinearity is enhance... |
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Analysis of the systemic effect of red and infrared laser therapy on wound repair.
Photomed. Laser Surg. 27(6) , 929-35, (2009) To evaluate, using histological analysis, the systemic action and repair process of wounds produced on the back of rats and treated with red, infrared, or both lasers applied directly or indirectly to the wounds.Skin tissue repair and wound healing are comple... |
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Nanoscale phase dynamics of the normal tear film.
Nanomedicine: Nanotechnology, Biology, and Medicine 6(6) , 707-13, (2010) The tear film is a dynamic multilayered structure. The interactions and the interfacial dynamics between the layers that occur during a blink cycle must be such that they allow for maintenance of a stable tear film. Attempts to understand these dynamics have ... |
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Cavity-enhanced stimulated raman scattering from short GaP nanowires.
Nano Lett. 9(9) , 3252-7, (2009) We report the first observation of stimulated Raman scattering (SRS) from semiconductor nanowires (SNWs). Using continuous wave (CW) excitation (514.5 nm), very strong nonlinear SRS was observed in backscattering from short segments of crystalline GaP NWs wit... |
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Assessment of the passivation capabilities of two different covalent chemical modifications on GaP(100).
Langmuir 26(11) , 8141-6, (2010) Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a termina... |
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InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.
Opt. Express 20(17) , 19279-88, (2012) We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test d... |
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DNA molecules on GaP (100) surfaces: spectroscopic characterization and biospecificity assessment.
ChemPhysChem 9(11) , 1528-30, (2008)
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Mid-infrared optical parametric oscillators based on uniform GaP waveguides.
Opt. Express 18(19) , 20370-83, (2010) Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear cr... |
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High quantum efficiency GaP avalanche photodiodes.
Opt. Express 19(20) , 19607-12, (2011) Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher ... |
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Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model.
Photomed. Laser Surg. 27(6) , 901-6, (2009) To evaluate the effect of phototherapy on the viability of cultured C2C12 myoblasts under different nutritional conditions (muscle injury model) using low-energy gallium-aluminum-arsenide (GaAlAs) and aluminium-gallium-indium-phosphide (InGaAlP) lasers with d... |