Poly(3-hexylthiophene-2,5-diyl)

Poly(3-hexylthiophene-2,5-diyl) Structure
Poly(3-hexylthiophene-2,5-diyl) structure
Common Name Poly(3-hexylthiophene-2,5-diyl)
CAS Number 156074-98-5 Molecular Weight 326.091
Density 1.6±0.1 g/cm3 Boiling Point 317.2±37.0 °C at 760 mmHg
Molecular Formula C10H14Br2S Melting Point 238 ℃
MSDS Chinese USA Flash Point 145.6±26.5 °C
Symbol GHS07
GHS07
Signal Word Warning

Comparing spiro-OMeTAD and P3HT hole conductors in efficient solid state dye-sensitized solar cells.

Phys. Chem. Chem. Phys. 14(2) , 779-89, (2012)

Two hole conductor materials, spiro-OMeTAD and P3HT, were compared in solid-state dye-sensitized solar cells. Two organic dyes containing one anchor unit (D35) or two anchor units (M3) were used in the comparison. Absorbed photon to current conversion efficie...

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p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells Irwin, M. D.; et al.

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In situ UV-visible absorption during spin-coating of organic semiconductors: a new probe for organic electronics and photovoltaics. Abdelsamie M, et al.

J. Mater. Chem. C 2(17) , 3373-3381

Electrospun poly(3-hexylthiophene-2,5-diyl) fiber field effect transistor. Gonzalez R, et al.

Synt. Metals 151 , 275–278

Dependence of Charge Separation Efficiency on Film Microstructure in Poly(3-hexylthiophene-2,5-diyl): [6,6]-Phenyl-C61 Butyric Acid Methyl Ester Blend Films Keivanidis PE, et al.

J. Phys. Chem. Lett. 1 , 734–738, (2010)

Flexible Transistors Exploiting P3HT on Paper Substrate and Graphene Oxide Film as Gate Dielectric: Proof of Concept. Valentini L, et al.

Sci. Adv. Mater. 5(5) , 530-533, (2013)

High sensitivity organic photodiodes with low dark currents and increased lifetimes Ramuz, M.; Bürgi, L.; Winnewisser, C.; et al.

Org. Electron. 9 , 369-376, (2008)

A photodiode with high rectification ratio based on well-aligned ZnO nanowire arrays and regioregular poly(3-hexylthiophene-2,5-diyl) hybrid heterojunction. Yuan Z, et al.

Appl. Phys. A. Mater. Sci. Process. 106(3) , 511-515, (2012)