四(乙基甲基氨基)铪结构式
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常用名 | 四(乙基甲基氨基)铪 | 英文名 | Tetrakis(ethylmethylamino)hafnium |
|---|---|---|---|---|
| CAS号 | 352535-01-4 | 分子量 | 410.89900 | |
| 密度 | 1.324 | 沸点 | 79ºC0.1 mm Hg(lit.) | |
| 分子式 | C12H32HfN4 | 熔点 | <-50ºC | |
| MSDS | 中文版 美版 | 闪点 | 52 °F | |
| 符号 |
GHS02, GHS07 |
信号词 | Danger |
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In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).
ACS Appl. Mater. Interfaces 2 , 347, (2010) The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass... |