Tetrakis(ethylmethylamino)hafnium
Tetrakis(ethylmethylamino)hafnium structure
|
Common Name | Tetrakis(ethylmethylamino)hafnium | ||
|---|---|---|---|---|
| CAS Number | 352535-01-4 | Molecular Weight | 410.89900 | |
| Density | 1.324 | Boiling Point | 79ºC0.1 mm Hg(lit.) | |
| Molecular Formula | C12H32HfN4 | Melting Point | <-50ºC | |
| MSDS | Chinese USA | Flash Point | 52 °F | |
| Symbol |
GHS02, GHS07 |
Signal Word | Danger | |
|
In situ reaction mechanism studies on ozone-based atomic layer deposition of Al(2)O(3) and HfO(2).
ACS Appl. Mater. Interfaces 2 , 347, (2010) The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass... |
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